FLM5964-35F Datasheet | Eudyna Devices

FEATURES - High Output Power: P1d B=45.5d Bm(Typ.) - High Gain: G1d B=9.0d B(Typ.) - High PAE: ηadd=36%(Typ.) - Broad Band: 5.9~6.4GHz - Impedance Matched Zin/Zout = 50Ω - Hermetically Sealed Package C-Band Internally Matched FET DESCRIPTION The FLM5964-35F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25o C) Ite m Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage -5 Total Pow er Dissipation Storage Tem perature Ts t g -65 to +175 o C Channel Tem perature Tch 175 o C REMENDED OPERATING CONDITION(Case Temperature Tc=25o C) Ite m Sym bol Condition Lim it Unit DC Input Voltage Forw ard Gate Current Reverse Gate Current RG=10Ω...