Full PDF Text Transcription for FLM5964-35F (Reference)
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FLM5964-35F. For precise diagrams, and layout, please refer to the original PDF.
FLM5964-35F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=45.5dBm(Typ.) • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=36%(Typ.) • Broad Band: 5.9 to 6...
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in: G1dB=9.0dB(Typ.) • High PAE: hadd=36%(Typ.) • Broad Band: 5.9 to 6.4GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM5964-35F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Storage Temperature Tstg Channel Temperature Tch Rating 15 -5 115 -65 to +175 175 Limit <= 10 <= 108 >=-23.2 Limit Typ. 16 16 -1.5 45.5 9.0 8.5 36 -40 Unit V V W deg.C deg.C Unit V mA
FLM5964-35F Datasheet
