FLM5964-35F Datasheet | SUMITOMO

FEATURES - High Output Power: P1d B=45.5d Bm(Typ.) - High Gain: G1d B=9.0d B(Typ.) - High PAE: hadd=36%(Typ.) - Broad Band: 5.9 to 6.4GHz - Impedance Matched Zin/Zout = 50ohm - Hermetically Sealed Package DESCRIPTION The FLM5964-35F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Storage Temperature Tstg Channel Temperature Tch Rating 15 -5 115 -65 to +175 175 Limit <= 10 <= 108 >=-23.2 Limit Typ. 16 16 -1.5 45.5 9.0 8.5 36 -40 Unit V V W deg.C deg.C Unit V m A m A REMENDED OPERATING CONDITION (Case Temperature Tc=25deg.C) Item Symbol Condition DC Input Voltage VDS Forward Gate Current IGF RG=10ohm Reverse Gate Current IGR RG=10ohm ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Output Power at 1d B G.C.P. Power Gain at 1d B G.C.P. Drain Current Power-Added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE Symbol IDSS gm Vp VGSO P1d B G1d B Idsr hadd DG IM3 Rth DTch Condition VDS=5V, V GS=0V VDS=5V, IDS=8.0A VDS=5V, IDS=960m A IGS=-960u A VDS=10V f= 5.9 to 6.4 GHz IDS(DC)=8.0A (typ.) Zs =ZL=50 ohm f=6.4 GHz Df=10MHz, 2-tone Test Pout=35.0d Bm(S.C.L.) Channel to Case 10V x IDS(DC) x Rth IK Min. -0.5 -5.0 45.0 8.0 -38 Max. -3.0 9.5 1.2 - Unit A S V V d Bm d B A % d B d Bc 1.1 1.3 deg.C/W 100 deg.C G.C.P.: Gain pression Point Class 3A ESD Note : Based on JEDEC　JESD22-A114 (C=100p F, R=1.5kohm) Ro HS pliance Yes 4000V to 8000V Edition 1.5 Jan. 2013 C-Band Internally Matched FET Power Derating Curve Total Powe r Dissipation (W) Output Power & P.A.E. vs. Input Power VDS=10V, IDS(DC), F=6.15GHz 49 47 Output Power (d Bm) 80 70 Power 60 50 40 30 P.A.E 120 100 80 60 40 20 0 0 50 100...