FLM7785-18F
FLM7785-18F is Internally Matched FET manufactured by Eudyna Devices.
FEATURES
- High Output Power: P1d B = 42.5d Bm (Typ.)
- High Gain: G1d B = 7.0d B (Typ.)
- High PAE: ηadd = 29% (Typ.)
- Low IM3 = -45d Bc@Po = 31.5d Bm
- Broad Band: 7.7 ~ 8.5GHz
- Impedance Matched Zin/Zout = 50Ω
- Hermetically Sealed
DESCRIPTION
The FLM7785-18F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
-5
Total Power Dissipation
Tc = 25°C
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
°C
Fujitsu remends the following conditions for the reliable operation of Ga As FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 18.0 and -8.4 m A respectively with gate resistance of 25Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol...
