Datasheet Summary
Features
- High Output Power: P1dB = 23.0dBm (Typ.)@2GHz
- High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz
- Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz
- Low Bias Conditions: VDS=3V, 20mA
- Cost Effective Hermetic Microstrip Package
- Tape and Reel Available
General Purpose GaAs FET
DESCRIPTION
The FSU02LG is a high performance, low noise, GaAs FET designed for PCS/PCN applications as a driver in the 2GHz band.
Eudyna stringent Quality Assurance Program assures the highest reliability and consistent...