Full PDF Text Transcription for FLM3135-8F (Reference)
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FLM3135-8F. For precise diagrams, and layout, please refer to the original PDF.
FLM3135-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm (Typ.) High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low I...
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yp.) High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -45dBc@Po = 28.5dBm Broad Band: 3.1 ~ 3.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FLM3135-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT T
FLM3135-8F Datasheet
