EL357ND Overview
Description
The EL357N-G series contains an infrared emitting diode, optically coupled to a phototransistor detector. The devices in a 4-pin small outline SMD package.
Key Features
- Halogens free
- Current transfer ratio (CTR: 50~600% at IF =5mA, VCE =5V)
- High isolation voltage between input and output (Viso=3750 V rms )
- Compact 4 Pin SOP with a 2.0 mm profile
- Pb free and RoHS compliant
- UL approved (No. E214129)
- VDE approved (No
- SEMKO approved
- NEMKO approved
- DEMKO approved
