EL816C
Description
The EL816 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Key Features
- Current transfer ratio (CTR: 50~600% at IF =5mA, VCE =5V) (CTR: 63~320% at IF =10mA, VCE =5V)
- High isolation voltage between inputs and output (Viso=5000 V rms)
- Creepage distance >7.62 mm
- Operating temperature up to +110°C
- Compact small outline package
- Pb free and RoHS compliant.
- UL approved (No. E214129)
- VDE approved (No. 132249)
- SEMKO approved
- NEMKO approved
