EL817L Overview
Description
The EL817 series contains a infrared emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Key Features
- Current transfer ratio (CTR:MIN.50% at IF =5mA ,VCE =5V)
- High isolation voltage between input and output (Viso=5000 V rms )
- Compact dual-in-line package EL817L*:1-channel type
- Pb free Preliminary EL817L Series
- UL approved (No. E214129)
