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EL2501-G - 4 Pin Dip Phototransistor

Description

The EL2501-G series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector encapsulated with green compound..

They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.

Progr

Features

  • Halogens free.
  • Current transfer ratio (CTR: 80~600% at I F =5mA, V CE =5V).
  • High isolation voltage between input and output (Viso=5000 V rms ).
  • Creepage distance >7.62 mm.
  • Operating temperature up to +110°C.
  • Compact small outline package.
  • Pb free and RoHS compliant.
  • UL approval.
  • VDE approval.
  • SEMKO approval.
  • NEMKO approval.
  • DEMKO approval.
  • FIMKO approval.
  • CSA approval.

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Full PDF Text Transcription

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4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER Features: • Halogens free. • Current transfer ratio (CTR: 80~600% at I F =5mA, V CE =5V) • High isolation voltage between input and output (Viso=5000 V rms ) • Creepage distance >7.62 mm • Operating temperature up to +110°C • Compact small outline package • Pb free and RoHS compliant. • UL approval • VDE approval • SEMKO approval • NEMKO approval • DEMKO approval • FIMKO approval • CSA approval EL2501-G Series Description The EL2501-G series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector encapsulated with green compound.. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option. www.DataSheet.co.
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