EL2501-G Overview
Description
The EL2501-G series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector encapsulated with green compound. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Key Features
- Halogens free
- Current transfer ratio (CTR: 80~600% at I F =5mA, V CE =5V)
- High isolation voltage between input and output (Viso=5000 V rms )
- Creepage distance >7.62 mm
- Operating temperature up to +110°C
- Compact small outline package
- Pb free and RoHS compliant
- VDE approval
- SEMKO approval
- NEMKO approval
