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EIA1314A-2P - 13.0-14.5GHz 2W Internally Matched Power FET

Features

  • HIGH PAE( 30%.

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Datasheet preview – EIA1314A-2P

Datasheet Details

Part number EIA1314A-2P
Manufacturer Excelics Semiconductor
File Size 48.99 KB
Description 13.0-14.5GHz 2W Internally Matched Power FET
Datasheet download datasheet EIA1314A-2P Datasheet
Additional preview pages of the EIA1314A-2P datasheet.

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Full PDF Text Transcription

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Excelics • • • • • 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM FEATURES HIGH PAE( 30% TYPICAL) 33.0dBm TYPICAL P1dB OUTPUT POWER 9dB TYPICAL G1dB POWER GAIN NON-HERMETIC METAL FLANGE PACKAGE EIA1314A-2P Not recommended for new designs. Contact factory. Effective 03/2003 13.0-14.5GHz, 2W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1314A-2P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=13.0-14.5GHz Vds=8V, Idsq=0.5 Idss Gain at 1dB Compression Vds=8V, Idsq=0.5 Idss f=13.0-14.5GHz MIN 32.5 8 TYP 33.0 9 MAX UNIT dBm dB P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth Power Added Efficiency at 1dB compression f=13.0-14.5GHz Vds=8V, Idsq=0.
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