Datasheet4U Logo Datasheet4U.com

EIA1314A-8P - 13.0-14.5GHz 8W Internally Matched Power FET

📥 Download Datasheet

Datasheet preview – EIA1314A-8P

Datasheet Details

Part number EIA1314A-8P
Manufacturer Excelics Semiconductor
File Size 48.80 KB
Description 13.0-14.5GHz 8W Internally Matched Power FET
Datasheet download datasheet EIA1314A-8P Datasheet
Additional preview pages of the EIA1314A-8P datasheet.

📁 Similar Datasheet

  • EIA1111 - High Power Capacitors (S42E Silver Series) Specification (Johanson Technology)
  • EIA4025 - Proximity Sensors Inductive Thermoplastic Polyester Housing Type (CARLO GAVAZZI)
Other Datasheets by Excelics Semiconductor
  • EIA1314A-2P - 13.0-14.5GHz 2W Internally Matched Power FET
  • EIA1314A-4P - 13.0-14.5GHz 4W Internally Matched Power FET
  • EIA1314-2P - 13.75-14.5 GHz 2-W Internally Matched Power FET
  • EIA1314-4P - 13.75-14.5 GHz 4W Internally Matched Power FET
  • EIA1314-8P - 13.75-14.5GHz 8W Internally Matched Power FET
  • EIA1011-2P - 2W Internally Matched Power FET
  • EIA1011-4P - 10.7-11.7GHz 4W Internally Matched Power FET
  • EIA1111-2 - 11.0-11.5 GHz 2-Watt Internally Matched Power FET

Full PDF Text Transcription

Click to expand full text
Excelics • • • • • 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE(25% TYPICAL) +39dBm TYPICAL P1dB OUTPUT POWER 6.5dB TYPICAL G1dB POWER GAIN NON-HERMETIC METAL FLANGE PACKAGE EIA1314A-8P Not recommended for new designs. Contact factory. Effective 03/2003 13.0-14.5GHz, 8W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1314A-8P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=13.0-14.5GHz Vds=8V, Idsq=0.5 Idss Gain at 1dB Compression Vds=8V, Idsq=0.5 Idss f=13.0-14.5GHz MIN 38 5.5 TYP 39 6.5 25 3520 46 4400 5760 6000 -1.0 -13 -15 2.3 o MAX UNIT dBm dB % mA dBm P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth Power Added Efficiency at 1dB compression f=13.0-14.5GHz Vds=8V, Idsq=0.
Published: |