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EIB1314-4P - Internally Matched Power FET

Key Features

  • HIGH PAE( 27%.

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Datasheet Details

Part number EIB1314-4P
Manufacturer Excelics Semiconductor
File Size 49.31 KB
Description Internally Matched Power FET
Datasheet download datasheet EIB1314-4P Datasheet

Full PDF Text Transcription for EIB1314-4P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for EIB1314-4P. For precise diagrams, and layout, please refer to the original PDF.

Excelics • • • • • • 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 27% TYPICAL) EIB FEATURES HIGH IP3(49dBm TYPICAL) +36.5/+...

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ES HIGH PAE( 27% TYPICAL) EIB FEATURES HIGH IP3(49dBm TYPICAL) +36.5/+36dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 8.5/7.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1314-4P Not recommended for new designs. Contact factory. Effective 03/2003 13.75-14.5GHz, 4W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1314-4P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficiency at 1dB compression f=13.75-

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