EIB1314-4P - 13.75-14.5 GHz 4W Internally Matched Power FET

Features

HIGH PAE( 27%.

Excelics Semiconductor

Datasheet Details

Part number	EIB1314-4P
Manufacturer	Excelics Semiconductor
File Size	49.31 KB
Description	13.75-14.5 GHz 4W Internally Matched Power FET
Datasheet	EIB1314-4P Datasheet
Additional preview pages of the EIB1314-4P datasheet.

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Full PDF Text Transcription

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Excelics • • • • • • 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 27% TYPICAL) EIB FEATURES HIGH IP3(49dBm TYPICAL) +36.5/+36dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 8.5/7.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1314-4P Not recommended for new designs. Contact factory. Effective 03/2003 13.75-14.5GHz, 4W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1314-4P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficiency at 1dB compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.

Published: Feb 17, 2011 |