EIB1414A-4P Datasheet | Excelics Semiconductor

Excelics - - - - - - 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA Features HIGH PAE( 27% TYPICAL) EIB Features HIGH IP3(49d Bm TYPICAL) +36.5/+35.5d Bm TYPICAL P1d B OUTPUT POWER FOR EIA/EIB 8.5/7.5d B TYPICAL G1d B POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1414-4P Not remended for new designs. Contact factory. Effective 03/2003 14.0-14.5GHz, 4W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1414-4P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1d B pression f=14.0-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1d B pression f=14.0-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficiency at 1d B pression f=14.0-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Drain Current at 1d B pression Output 3 Order Intercept Point f=14.0-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=24m A -13 2200 rd EIB1414-4P MAX MIN 35 6.5 TYP 35.5 7.5 MAX UNIT d Bm d B MIN 35.5 7.5 TYP 36.5 8.5 P1d B G1d B PAE Id1d B IP3 Idss Gm Vp BVgd Rth 27 1760 43 2880 3000 -1.0 -15 4.5 -2.5 3400 2200 22 1700 49- 2720 1400 -2.0 -15 4.5 o % m A d Bm 3400 m A m S -3.5 V V C/W Drain Breakdown Voltage Igd=9.6m A Thermal Resistance (Au-Sn Eutectic Attach) - Typical - 45d Bc IM3 at Pout=26d Bm/Tone MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch .. Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 360m A 35d Bm 175o C -65/175o C 30W 8V -3V 3120m A 60m A @ 3d B pression 150o C -65/150o C 25W CONTINUOUS2 Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085 Phone: (408)...