EIB1415-2P
EIB1415-2P is Internally Matched Power FET manufactured by Excelics Semiconductor.
UPDATED 06/14/06
14.40-15.35GHz 2W Internally Matched Power FET
Features
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- 14.40-15.35 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.0 dBm Output Power at 1dB pression 7.5 dB Power Gain at 1dB pression 24% Power Added Efficiency -46 dBc IM3 at PO = 22.0 dBm SCL Non-Hermetic Metal Flange Package
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB pression f = 14.40-15.35GHz VDS = 8 V, IDSQ ≈ 800mA Gain at 1dB pression f = 14.40-15.35GHz VDS = 8 V, IDSQ ≈ 800mA Gain Flatness f = 14.40-15.35GHz VDS = 8 V, IDSQ ≈ 800mA Power Added Efficiency at 1dB...
