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EIB1415-4P - Internally Matched Power FET

Key Features

  • 14.40-15.35 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 23% Power Added Efficiency -46 dBc IM3 at PO = 25.0 dBm SCL Non-Hermetic Metal Flange Package EIB1415-4P.

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Datasheet Details

Part number EIB1415-4P
Manufacturer Excelics Semiconductor
File Size 113.36 KB
Description Internally Matched Power FET
Datasheet download datasheet EIB1415-4P Datasheet

Full PDF Text Transcription for EIB1415-4P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for EIB1415-4P. For precise diagrams, and layout, please refer to the original PDF.

EIB1415-4P UPDATED 06/14/06 14.40-15.35GHz 4W Internally Matched Power FET FEATURES • • • • • • • 14.40-15.35 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36....

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.40-15.35 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 23% Power Added Efficiency -46 dBc IM3 at PO = 25.0 dBm SCL Non-Hermetic Metal Flange Package EIB1415-4P ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.40-15.35GHz VDS = 8 V, IDSQ ≈ 1600mA Gain at 1dB Compression f = 14.40-15.35GHz VDS = 8 V, IDSQ ≈ 1600mA Gain Flatness f = 14.40-15.35GHz VDS = 8 V, IDSQ ≈ 1600mA Power Added Efficiency at 1dB Compression f = 14.40-15.35GHz VDS = 8

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