EIC4450-10 Datasheet | Excelics Semiconductor

.. UPDATED 07/25/2007 4.40-5.00 GHz 10-Watt Internally Matched Power FET Features - - - - - - - 4.40- 5.00GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB pression 10.0 dB Power Gain at 1dB pression 35% Power Added Efficiency -46 dBc IM3 at PO = 29.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB pression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB pression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added...