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EIC4450-4 - Internally Matched Power FET

Features

  • 4.40.
  • 5.00GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 11.5 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH.

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Datasheet preview – EIC4450-4

Datasheet Details

Part number EIC4450-4
Manufacturer Excelics Semiconductor
File Size 210.41 KB
Description Internally Matched Power FET
Datasheet download datasheet EIC4450-4 Datasheet
Additional preview pages of the EIC4450-4 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com EIC4450-4 UPDATED 08/21/2007 4.40-5.00 GHz 4-Watt Internally Matched Power FET FEATURES • • • • • • • 4.40–5.00GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 11.5 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH Caution! ESD sensitive device. MIN 35.5 10.5 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA f = 4.
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