EIC4450-4 Datasheet | Excelics Semiconductor

.. UPDATED 08/21/2007 4.40-5.00 GHz 4-Watt Internally Matched Power FET Features - - - - - - - 4.40- 5.00GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB pression 11.5 dB Power Gain at 1dB pression 37% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH Caution! ESD sensitive device. MIN 35.5 10.5 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB pression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB pression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 4.40-5.00GHz...