EIC4853-25 Datasheet | Excelics Semiconductor

.. 4.8-5.30 GHz 25-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0.102 Features - - - - - - - 4.80 - 5.30GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +44.5 d Bm Output Power at 1d B pression 9.5 d B Power Gain at 1d B pression 36% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH Excelics 0.945 0.803 0.024 0.580 YYWW 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 ELECTRICAL CHARACTERISTICS (Tb = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IDSS VP RTH 1. Caution! ESD sensitive device. MIN 43.5 9 PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 4.80-5.30 GHz VDS = 10 V, IDSQ ≈ 6500m A Gain at 1d B pression f = 4.80-5.30 GHz VDS = 10 V, IDSQ ≈ 6500m A Gain Flatness f = 4.80-5.30 GHz VDS = 10 V, IDSQ ≈ 6500m A Power Added Efficiency at 1d B pression VDS = 10 V, IDSQ ≈ 6500m A f = 4.80-5.30 GHz Drain Current at 1d B pression Saturated Drain Current Pinch-off Voltage Thermal Resistance 44.5 10 UNITS d Bm d B ±0.6 36 7050 11 -2.5 1.4 8300 16 -4.0 1.8 o d B % m A A V C/W f = 4.80-5.30 GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 130 m A 2. Tested with 15 Ohm gate resistor, forward and reverse gate current should not exceed 130m A and -10.5m A respectively Overall Rth depends on case mounting. MAXIMUM RATING AT Tb = 25°C1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15 -5 38 d Bm 175 o C -65 to +175 o C 83W OPERATING2 10V -4V @ 3d B pression 175 o C -65 to +175 o C...