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C30659 - Si and InGaAs APD Preamplifier

Datasheet Summary

Features

  • System bandwidths of 50 MHz and 200MHz.
  • Ultra low noise equivalent power (NEP).
  • Spectral response range:.
  • With Si APD: 400 to 1100 nm.
  • With InGaAs APD: 1100 to 1700 nm.
  • Typical power consumption: 150 mW.
  • ±5 V amplifier operating voltages.
  • 50 Ω AC load capability (AC-Coupled).
  • Hermetically-sealed TO-8 package.
  • High reliability.
  • Fast overload recovery.
  • Pin-to-pin compatible with the C30950 Series.
  • Light entry angle, over 130.

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Datasheet preview – C30659

Datasheet Details

Part number C30659
Manufacturer Excelitas
File Size 765.86 KB
Description Si and InGaAs APD Preamplifier
Datasheet download datasheet C30659 Datasheet
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DATASHEET Photon Detection C30659 Series – 900/1060/1550/1550E Si and InGaAs APD Preamplifier Modules Excelitas’ C30659-1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities. Excelitas Technologies’ C30659 Series includes a Si or InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to allow for ultra-low noise operation. The Si APDs used in these devices are the same as used in Excelitas’ C30817EH, C30902EH, C30954EH and C30956EH products, while the InGaAs APDs are used in the C30645EH and C30662EH products. These detectors provide very good response between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths.
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