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EMA04N03A
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
4mΩ
ID
80A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate‐Source Voltage
VGS
±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C
80
ID
TC = 100 °C
50
IDM
170
Avalanche Current
IAS
53
Avalanche Energy
L = 0.1mH, ID=53A, RG=25Ω
EAS
140
Repetitive Avalanche Energy2
L = 0.05mH
EAR
40
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
96 38 ‐55 to 150
100% UIS testing in condition of VD=15V, L=0.
EMA04N03A Datasheet
