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EMA09N03CS Datasheet PDF

Excelliance MOS EMA09N03CS

N-Channel MOSFET

Part No. EMA09N03CS
Datasheet EMA09N03CS Download
Manufacturer
Excelliance MOS
Description N-Channel MOSFET
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EMA09N03CS datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=37.5A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg EMA09N03CS LIMITS ±20 50 35 140 37.5 70 15 50 20 ‐55 to 150 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case R●JC Junction‐to‐Ambient R●JA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1% 2013/8/22 TYPICAL MAXIMUM 2.5 75 UNIT °C / W p.1

ELECTRICAL CHARACTERISTICS

(TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMA09N03CS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Res...
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