Excelliance MOS EMA09N03CS
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=37.5A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg EMA09N03CS LIMITS ±20 50 35 140 37.5 70 15 50 20 ‐55 to 150 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case R●JC Junction‐to‐Ambient R●JA 1Pulse width limited by maximum junction temperature. 2Duty cycle 1% 2013/8/22 TYPICAL MAXIMUM 2.5 75 UNIT °C / W p.1ELECTRICAL CHARACTERISTICS
(TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMA09N03CS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Res...