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EMB08N03V - N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Datasheet Details

Part number EMB08N03V
Manufacturer Excelliance MOS
File Size 235.38 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB08N03V Datasheet

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 8.2mΩ ID 22A G UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMB08N03V LIMITS UNIT Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TA = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, IAS=30A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD PD Tj, Tstg ±20 V 22 13 A 16 88 30 45 mJ 22.5 21 W 8.3 2.
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