EMB08N06H datasheet by Excelliance MOS.
| Part number | EMB08N06H |
|---|---|
| Datasheet | EMB08N06H-ExcellianceMOS.pdf |
| File Size | 212.50 KB |
| Manufacturer | Excelliance MOS |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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EMB08N06H N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1％ 3Pulsed drain current rating is package limited. Pulse Width 300 sec, Duty Cycle 2％.
View all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMB08N06A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB08N06CS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB08N06VS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB08N03A | MOSFET |
| EMB08N03V | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB08K04G | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB08K04HP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB02K03HP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB02N03HR | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB02N03HS | MOSFET |
