EMB08N06H Description
EMB08N06H N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1％ 3Pulsed drain current rating is package limited. Pulse Width 300 sec, Duty Cycle 2％.
- Part: EMB08N06H
- Manufacturer: Excelliance MOS
- Size: 212.50 KB
Related Excelliance MOS Datasheets
| Part Number | Description |
|---|---|
| EMB08N06A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB08N06CS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB08N06VS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB08N03A | MOSFET |
| EMB08N03V | N-Channel Logic Level Enhancement Mode Field Effect Transistor |