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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
11mΩ
ID
12A
UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 100 °C
Avalanche Current
Avalanche Energy Repetitive Avalanche Energy2
L = 0.1mH, ID=12A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS EAR PD
Tj, Tstg
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature. 2Duty cycle 1％ 362.
EMB11A03G Datasheet
