EMB12N04V - MOSFET

Excelliance MOS

Datasheet Details

Part number	EMB12N04V
Manufacturer	Excelliance MOS
File Size	192.86 KB
Description	MOSFET
Datasheet	EMB12N04V Datasheet
Additional preview pages of the EMB12N04V datasheet.

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Full PDF Text Transcription

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 12.8mΩ ID 18A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=12A, RG=25Ω L = 0.

Published: Apr 26, 2017 |