EMB12N06G datasheet by Excelliance MOS.
| Part number | EMB12N06G |
|---|---|
| Datasheet | EMB12N06G-ExcellianceMOS.pdf |
| File Size | 179.29 KB |
| Manufacturer | Excelliance MOS |
| Description | MOSFET |
|
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1％ 350°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2％.
View all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMB12N06CS | N-Channel FET |
| EMB12N03A | MOSFET |
| EMB12N03G | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N03H | MOSFET |
| EMB12N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N03V | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N03VAT | MOSFET |
| EMB12N04A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N04G | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N04V | MOSFET |
