EMB12N06G Description
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1％ 350°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2％.
- Part: EMB12N06G
- Manufacturer: Excelliance MOS
- Size: 179.29 KB
Related Excelliance MOS Datasheets
| Part Number | Description |
|---|---|
| EMB12N06CS | N-Channel FET |
| EMB12N03A | MOSFET |
| EMB12N03G | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N03H | MOSFET |
| EMB12N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor |