EMB12N10H Description
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2％. 3Pulse width limited by maximum junction temperature.
- Part: EMB12N10H
- Manufacturer: Excelliance MOS
- Size: 218.31 KB
Related Excelliance MOS Datasheets
| Part Number | Description |
|---|---|
| EMB12N10A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N10CS | MOSFET |
| EMB12N10G | MOSFET |
| EMB12N10VS | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N03A | MOSFET |