EMB12N10H datasheet by Excelliance MOS.
| Part number | EMB12N10H |
|---|---|
| Datasheet | EMB12N10H-ExcellianceMOS.pdf |
| File Size | 218.31 KB |
| Manufacturer | Excelliance MOS |
| Description | MOSFET |
|
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2％. 3Pulse width limited by maximum junction temperature.
View all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMB12N10A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N10CS | MOSFET |
| EMB12N10G | MOSFET |
| EMB12N10VS | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N03A | MOSFET |
| EMB12N03G | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N03H | MOSFET |
| EMB12N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N03V | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N03VAT | MOSFET |
