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EMB12N10VS - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 12.0mΩ 15.0mΩ ID @TC=25℃ 59.0A ID @TA=25℃ 10.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL

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Datasheet Details

Part number EMB12N10VS
Manufacturer Excelliance MOS
File Size 449.30 KB
Description Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB12N10VS Datasheet

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Full PDF Text Transcription

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Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 12.0mΩ 15.0mΩ ID @TC=25℃ 59.0A ID @TA=25℃ 10.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 VGS TC = 25 °C TC = 100 °C ID TA = 25 °C TA = 70 °C ID IDM Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 IAS L = 0.1mH EAS L = 0.
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