EMB12N10VS Overview
2Duty cycle < 1% 355°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width ≦ 300 usec, Duty Cycle ≦ 2%. 2Independent of operating temperature.
EMB12N10VS datasheet by Excelliance MOS.
| Part number | EMB12N10VS |
|---|---|
| Datasheet | EMB12N10VS-ExcellianceMOS.pdf |
| File Size | 449.30 KB |
| Manufacturer | Excelliance MOS |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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2Duty cycle < 1% 355°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width ≦ 300 usec, Duty Cycle ≦ 2%. 2Independent of operating temperature.
View all Excelliance MOS datasheets
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|---|---|
| EMB12N10A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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| EMB12N03H | MOSFET |
| EMB12N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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