EMB14P03G - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB14P03G
Manufacturer	Excelliance MOS
File Size	343.87 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB14P03G Datasheet

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Other Datasheets by Excelliance MOS

Part Number	Description
EMB14P03V	P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMB14N10CS	MOSFET
EMB14N10F	MOSFET
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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 14 mΩ ID -12A EMB14P03G P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C -12 ID TA = 100 °C -9 IDM -48 Avalanche Current Avalanche Energy L = 0.1mH, IAS=-19A, RG=25Ω Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range IAS EAS PD Tj, Tstg -19 18 2.5 1 -55 to 150 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RJC 25 Junction-to-Ambient3 RJA 60.