EMB14P03V - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB14P03V
Manufacturer	Excelliance MOS
File Size	327.94 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB14P03V Datasheet

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Other Datasheets by Excelliance MOS

Part Number	Description
EMB14P03G	P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMB14N10CS	MOSFET
EMB14N10F	MOSFET
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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: P-CH BVDSS -30V RDSON (MAX.)@VGS=-10V 14mΩ RDSON (MAX.)@VGS=-4.5V 22mΩ ID @TC=25℃ -20A P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C ID TA = 25 °C Pulsed Drain Current1 TC = 100 °C IDM Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 IAS L = 0.5mH, IAS=-19A, RG=25Ω EAS L = 0.