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EMB28C04G - MOSFET

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Datasheet Details

Part number EMB28C04G
Manufacturer Excelliance MOS
File Size 205.38 KB
Description MOSFET
Datasheet download datasheet EMB28C04G Datasheet

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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MAX.) N‐CH 40V 28mΩ P‐CH ‐40V 44mΩ D1 G1 D2 G2 ID 7A ‐6A S1 S2 EMB28C04G Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range ID IDM PD Tj, Tstg LIMITS N‐CH P‐CH ±20 ±20 7 ‐6 6 ‐5 28 ‐24 2 1.3 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient RJA 1Pulse width limited by maximum junction temperature.
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