EMB28P03L Overview
2Duty cycle < 1% 3The power dissipation PD is based on TJ(MAX)=150°C, using ≦10s junction-to-ambient . 4The value of RθJA is measured with mounted on a 1 in2 pad of 2 oz copper. Pulse Width ≦ 300 usec, Duty Cycle ≦ 2%.
EMB28P03L datasheet by Excelliance MOS.
| Part number | EMB28P03L |
|---|---|
| Datasheet | EMB28P03L-ExcellianceMOS.pdf |
| File Size | 562.66 KB |
| Manufacturer | Excelliance MOS |
| Description | Single P-Channel Logic Level Enhancement Mode Field Effect Transistor |
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2Duty cycle < 1% 3The power dissipation PD is based on TJ(MAX)=150°C, using ≦10s junction-to-ambient . 4The value of RθJA is measured with mounted on a 1 in2 pad of 2 oz copper. Pulse Width ≦ 300 usec, Duty Cycle ≦ 2%.
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