EMB28P03L Description
2Duty cycle < 1% 3The power dissipation PD is based on TJ(MAX)=150°C, using ≦10s junction-to-ambient . 4The value of RθJA is measured with mounted on a 1 in2 pad of 2 oz copper. Pulse Width ≦ 300 usec, Duty Cycle ≦ 2%.
EMB28P03L is Single P-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by Excelliance MOS.
| Part Number | Description |
|---|---|
| EMB28P06V | Single P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB28A04G | MOSFET |
| EMB28C03G | MOSFET |
| EMB28C04G | MOSFET |
| EMB20D03H | MOSFET |
2Duty cycle < 1% 3The power dissipation PD is based on TJ(MAX)=150°C, using ≦10s junction-to-ambient . 4The value of RθJA is measured with mounted on a 1 in2 pad of 2 oz copper. Pulse Width ≦ 300 usec, Duty Cycle ≦ 2%.