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EMB28P03L Datasheet Single P-Channel Logic Level Enhancement Mode Field Effect Transistor

Manufacturer: Excelliance MOS

Datasheet Details

Part number EMB28P03L
Manufacturer Excelliance MOS
File Size 562.66 KB
Description Single P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB28P03L Datasheet

General Description

: P-CH BVDSS -30V RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V 26.0mΩ 34.0mΩ ID @TA=25℃ -5.0A Single P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH L = 0.05mH Power Dissipation Power Dissipation TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID ID IDM IAS EAS EAR PD PD Tj, Tstg LIMITS ±25 -10 -6 -5 -4 -40 -14 9.8 4.9 4.2 1.7 2.5 1.6 -55 to 150 UNIT V A mJ W W °C ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT Junction-to-Case RθJC 30 Junction-to-Ambient3 t≦10s RθJA Steady-State RθJA 50 °C/W 90 1Pulse width limited by maximum junction temperature.

2Duty cycle < 1% 3The power dissipation PD is based on TJ(MAX)=150°C, using ≦10s junction-to-ambient thermal resistance.

4The value of RθJA is measured with mounted on a 1 in2 pad of 2 oz copper.

Overview

EMB28P03L Single P-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.