Datasheet Details
| Part number | EMB28P06V |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 430.81 KB |
| Description | Single P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
 EMB28P06V Datasheet
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| Part number | EMB28P06V |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 430.81 KB |
| Description | Single P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
EMB28P06V Datasheet
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: P-CH BVDSS -60V RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ 25mΩ 33mΩ -33A Single P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage TC = 25 °C Continuous Drain Current1 TC = 100 °C TA = 25 °C Pulsed Drain Current1 Avalanche Current1 Avalanche Energy1 Repetitive Avalanche Energy2 TA = 70 °C L = 0.1mH L = 0.05mH Power Dissipation1 Power Dissipation TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD PD Tj, Tstg ±20 -33 -21 -7 -5 -53 -45 101 50.6 41.7 16.7 2.1 1.3 -55 to 150 ▪100% UIS testing in condition of VD=-30V, L=0.1mH, VG=10V, IL=28A, Rated VDS=-60V P-CH ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 3 Junction-to-Ambient3 RθJA 60 1Pulse width limited by maximum junction temperature.
2Duty cycle ≦ 1％ 360°C / W when mounted on a 1 in2 pad of 2 oz copper.
UNIT V A mJ W W ℃ UNIT °C / W 2020/11/12 P.1 A.2 EMB28P06V ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current1 ID(ON) Drain-Source On-State Resistance1 RDS(ON) Forward Transconductance1 gfs VGS = 0V, ID = -250uA -60 VDS = VGS, ID = -250uA -1 VDS = 0V, VGS = ±20V VDS = -48V, VGS = 0V VDS = -40V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -10V -33 VGS = -10V, ID = -10A VGS = -4.5V, ID = -8A VDS = -5V, ID = -10A DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge1,2 Gate-Source Charge1,2 Gate-Drain Charge1,2
EMB28P06V Single P-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
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