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EMB28P06V - Single P-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

P-CH BVDSS -60V RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ 25mΩ 33mΩ -33A Single P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Vo

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Datasheet Details

Part number EMB28P06V
Manufacturer Excelliance MOS
File Size 430.81 KB
Description Single P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB28P06V Datasheet
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EMB28P06V Single P-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: P-CH BVDSS -60V RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ 25mΩ 33mΩ -33A Single P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage TC = 25 °C Continuous Drain Current1 TC = 100 °C TA = 25 °C Pulsed Drain Current1 Avalanche Current1 Avalanche Energy1 Repetitive Avalanche Energy2 TA = 70 °C L = 0.1mH L = 0.
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