EMB37C06A Datasheet | Excelliance MOS

N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MAX.) ID N‐CH 60V 37mΩ 12A P‐CH ‐60V 90mΩ ‐7A D1 G1 S1 D2 G2 S2 Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range ID IDM PD Tj, Tstg LIMITS N‐CH P‐CH ±20 ±20 ‐7 ‐5 ‐28 13 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient...