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EMB40A06S
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
RDSON (MAX.)
40mΩ
ID
6A
UIS, 100% Tested Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate‐Source Voltage
VGS
±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C
6
ID
TC = 100 °C
4.3
IDM
24
Avalanche Current
IAS
12
Avalanche Energy
L = 0.1mH, ID=12A, RG=25Ω
EAS
7.2
Repetitive Avalanche Energy2
L = 0.05mH
EAR
3.6
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
5 2 ‐55 to 150
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=7.
EMB40A06S Datasheet
