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P-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
-40V
RDSON (MAX.)
44mΩ
ID
-25A
P Channel MOSFET
UIS, Rg 100% Tested
Pb-Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
VGS
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C ID
TC = 100 °C
IDM
Avalanche Current
IAS
Avalanche Energy
L = 0.1mH
EAS
Repetitive Avalanche Energy2
L = 0.