EMB44P04Q - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB44P04Q
Manufacturer	Excelliance MOS
File Size	186.42 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB44P04Q Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
EMB4	Dual Digital Transistors	Rohm
EMB4	Dual Digital Transistors	JCET
EMB4	General purpose transistors	Jin Yu Semiconductor
EMB4FHA	Digital Transistor	ROHM
EMB09P03A	P-Channel 30V MOSFET	VBsemi

Other Datasheets by Excelliance MOS

Part Number	Description
EMB44P04A	P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMB40A03K	MOSFET
EMB40A06S	MOSFET
EMB40P06A	MOSFET
EMB45A06G	Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐40V RDSON (MAX.) 44mΩ ID ‐6A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=‐6A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature.