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EMB50P03JS Datasheet Single P-Channel Logic Level Enhancement Mode Field Effect Transistor

Manufacturer: Excelliance MOS

Datasheet Details

Part number EMB50P03JS
Manufacturer Excelliance MOS
File Size 323.23 KB
Description Single P-Channel Logic Level Enhancement Mode Field Effect Transistor
Download EMB50P03JS Download (PDF)

General Description

: P-CH BVDSS -30V RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TA=25℃ 50mΩ 85mΩ -4.0A Single P Channel MOSFET Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current1 TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH L = 0.05mH Power Dissipation1 TC = 25 °C TC = 100 °C Power Dissipation1 TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID ID IDM IAS EAS EAR PD PD Tj, Tstg ±20 -9.1 -5.7 -4.0 -3.2 -29 -18 16 8 6.3 2.5 1.2 0.8 -55 to 150 ▪100% UIS testing in condition of VD=25V, L=0.1mH, VG=10V, IL=-11A, RG=25Ω, Rated VDS=-30V P-CH ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 20 Junction-to-Ambient3 t≦10s Steady-State RθJA RθJA 66 104 1Pulse width limited by maximum junction temperature.

2Duty cycle < 1% 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.

Copper, in a still air environment with TA =25°C.

Overview

EMB50P03JS Single P-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.