EMB50P03JS Overview
2Duty cycle < 1% 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. Pulse Width ≦ 300 usec, Duty Cycle ≦ 2%.
EMB50P03JS datasheet by Excelliance MOS.
| Part number | EMB50P03JS |
|---|---|
| Datasheet | EMB50P03JS-ExcellianceMOS.pdf |
| File Size | 323.23 KB |
| Manufacturer | Excelliance MOS |
| Description | Single P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
|
|
2Duty cycle < 1% 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. Pulse Width ≦ 300 usec, Duty Cycle ≦ 2%.
View all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMB50P03J | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB50P03G | MOSFET |
| EMB50P03K | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB50P03VAT | MOSFET |
| EMB50B03G | MOSFET |
| EMB50B03V | MOSFET |
| EMB50D03G | MOSFET |
| EMB50N10A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB50N10S | MOSFET |
| EMB55A03G | MOSFET |