EMB55N03J - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB55N03J
Manufacturer	Excelliance MOS
File Size	179.29 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB55N03J Datasheet

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Full PDF Text Transcription

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 55mΩ ID 3.5A G S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C ID TA = 70 °C IDM Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD Tj, Tstg EMB55N03J LIMITS ±20 3.5 2.4 14 1.25 0.8 -55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient3 RθJA 100 Junction-to-Lead4 RθJL 55 1Pulse width limited by maximum junction temperature.

Published: Apr 25, 2017 |