Excelliance MOS EMB55N03JS
N-Channel Logic Level Enhancement Mode Field Effect Transistor
| Part No. | EMB55N03JS |
|---|---|
| Datasheet | EMB55N03JS Download |
| Manufacturer |  Excelliance MOS |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMB55N03JS LIMITS ±20 3.5 2.4 14 1.04 0.66 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Ambient3 R●JA (T ≤ 10sec) R●JA (Steady State) 1Pulse width limited by maximum junction temperature. 2Duty cycle 1％ 3The device mounted on a 1 in2 pad of 2 oz copper. TYPICAL MAXIMUM 83 120 UNIT °C / W 2016/10/28 p.1 EMB55N03JSELECTRICAL CHARACTERISTICS
(TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS I...
