EMB55N03JS - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB55N03JS
Manufacturer	Excelliance MOS
File Size	228.86 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB55N03JS Datasheet
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 55mΩ ID 3.5A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMB55N03JS LIMITS ±20 3.5 2.4 14 1.04 0.66 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Ambient3 RJA (T ≤ 10sec) RJA (Steady State) 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 3The device mounted on a 1 in2 pad of 2 oz copper.

Published: Jun 23, 2024 |