Excelliance MOS EMB60A06V
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
| Part No. | EMB60A06V |
|---|---|
| Datasheet | EMB60A06V Download |
| Manufacturer |  Excelliance MOS |
| Description | Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMB60A06V LIMITS UNIT Gate-Source Voltage VGS ±20 V Continuous Drain Current Pulsed Drain Current1 TA = 25 °C ID TA = 100 °C IDM 6 4.3 A 24 Avalanche Current IAS 12 Avalanche Energy L = 0.1mH, IAS=12A, RG=25Ω EAS Repetitive Avalanche Energy2 L = 0.05mH EAR 7.2 mJ 3.6 Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 2.27 W 0.9 -55 to 150 °C 100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=7.5A, Rated VDS=60V N-CH THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT Junction-to-Case R●JC Junction-to-Ambient3 R●JA 1Pulse width limited by maximum junction temperature. 2Duty cycle 1％ 355°C / W when mounted on a 1 in2 pad of 2 oz copper. 7.5 °C / W 55 2019/3/21 p.1ELECTRICAL CHARACTERISTICS
(TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMB60A06V LIMITS UNIT MIN TYP MAX STATIC Drain-Source...
