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EMB60A06V
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
RDSON (MAX.)
60mΩ
ID
6A
UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate‐Source Voltage
VGS
±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C
6
ID
TA = 100 °C
4.3
IDM
24
Avalanche Current
IAS
12
Avalanche Energy
L = 0.1mH, ID=10A, RG=25Ω
EAS
5
Repetitive Avalanche Energy2
L = 0.05mH
EAR
2.5
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
2.27 0.9 ‐55 to 150
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=7.
EMB60A06V Datasheet
