EMB90P06CS - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

General Description

P-CH BVDSS -60V RDSON (MAX.)@VGS=-10V 90mΩ RDSON (MAX.)@VGS=-4.5V 140mΩ ID @TC=25℃ -15A ID @TA=25℃ -3.8A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMB

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EMB90P06CS p-channel logic level enhancement mode field effect transistor by Excelliance MOS - Datasheet Preview

Datasheet Details

Part number	EMB90P06CS
Manufacturer	Excelliance MOS
File Size	349.02 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB90P06CS Datasheet

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EMB90P06CS Single P-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: P-CH BVDSS -60V RDSON (MAX.)@VGS=-10V 90mΩ RDSON (MAX.)@VGS=-4.5V 140mΩ ID @TC=25℃ -15A ID @TA=25℃ -3.8A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 TC = 25 °C TC = 100 °C ID -15 -9.5 Continuous Drain Current1 Pulsed Drain Current1 Avalanche Current1,4 Avalanche Energy1 TA = 25 °C TA = 70 °C ID -3.8 -3.0 IDM -33 IAS -30 L = 0.1mH EAS 45 Repetitive Avalanche Energy2 L = 0.05mH EAR 22.