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EMB90P06A - Single P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

P-CH BVDSS -60V RDSON (MAX.)@VGS=-10V 90mΩ RDSON (MAX.)@VGS=-4.5V 140mΩ ID @TC=25℃ -16A ID @TA=25℃ -4.2A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMB

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Datasheet Details

Part number EMB90P06A
Manufacturer Excelliance MOS
File Size 363.38 KB
Description Single P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB90P06A Datasheet

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EMB90P06A Single P-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: P-CH BVDSS -60V RDSON (MAX.)@VGS=-10V 90mΩ RDSON (MAX.)@VGS=-4.5V 140mΩ ID @TC=25℃ -16A ID @TA=25℃ -4.2A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 TC = 25 °C TC = 100 °C ID -16 -9.9 Continuous Drain Current1 Pulsed Drain Current1 Avalanche Current1,4 Avalanche Energy1 TA = 25 °C TA = 70 °C ID -4.2 -3.3 IDM -35 IAS -30 L = 0.1mH EAS 45 Repetitive Avalanche Energy2 L = 0.05mH EAR 22.