Datasheet Details
| Part number | EMB90P06A |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 363.38 KB |
| Description | Single P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMB90P06A-ExcellianceMOS.pdf |
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Overview: EMB90P06A Single P-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
| Part number | EMB90P06A |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 363.38 KB |
| Description | Single P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMB90P06A-ExcellianceMOS.pdf |
|
|
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: P-CH BVDSS -60V RDSON (MAX.)@VGS=-10V 90mΩ RDSON (MAX.)@VGS=-4.5V 140mΩ ID @TC=25℃ -16A ID @TA=25℃ -4.2A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 TC = 25 °C TC = 100 °C ID -16 -9.9 Continuous Drain Current1 Pulsed Drain Current1 Avalanche Current1,4 Avalanche Energy1 TA = 25 °C TA = 70 °C ID -4.2 -3.3 IDM -35 IAS -30 L = 0.1mH EAS 45 Repetitive Avalanche Energy2 L = 0.05mH EAR 22.5 Power Dissipation1 TC = 25 °C TC = 100 °C PD 43 17 Power Dissipation1 TA = 25 °C TA = 70 °C PD 3.0 2.0 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 ▪100% UIS testing in condition of VD=40V, L=0.1mH, VG=10V, IL=18A,RG=25Ω, Rated VDS=60V P-CH ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 2.9 Junction-to-Ambient3 t≦10s RθJA 13 Steady-State RθJA 41 1Pulse width limited by maximum junction temperature.
2Duty cycle < 1％ 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
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