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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
‐60V
RDSON (MAX.)
90mΩ
ID
‐5A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 100 °C
Avalanche Current
Avalanche Energy Repetitive Avalanche Energy2
L = 0.1mH, ID=‐5A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS EAR PD
Tj, Tstg
EMB90P06G
LIMITS ±25 ‐5 ‐3.5 ‐20 ‐5 1.25 0.625 2.
EMB90P06G Datasheet
