EMB90P06G datasheet by Excelliance MOS.
| Part number | EMB90P06G |
|---|---|
| Datasheet | EMB90P06G-ExcellianceMOS.pdf |
| File Size | 180.08 KB |
| Manufacturer | Excelliance MOS |
| Description | MOSFET |
|
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
View all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMB90P06A | Single P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB90P06CS | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB90A08G | MOSFET |
| EMB90N08A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB90N08G | MOSFET |
| EMB90N08V | MOSFET |
| EMB9930G | 2N & 2P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB99A0G | MOSFET |
| EMB02K03HP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB02N03HR | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
