EMBA0A10G Description
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
EMBA0A10G Datasheet
| Part number | EMBA0A10G |
|---|---|
| Download | EMBA0A10G Datasheet (PDF) |
| File Size | 190.25 KB |
| Manufacturer | Excelliance MOS |
| Description | MOSFET |
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