| Part number | EMBA0A10G |
|---|---|
| Datasheet | EMBA0A10G-ExcellianceMOS.pdf |
| File Size | 190.25 KB |
| Manufacturer | Excelliance MOS |
| Description | MOSFET |
|
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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
See all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMBA0N10A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA0N10CS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA0N10F | MOSFET |
| EMBA0N10G | MOSFET |
| EMBA0N10S | MOSFET |
| EMBA1N10A | MOSFET |
| EMBA1N10Q | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA2A06HS | Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA2A10VS | Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA2N10A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
