EMBA2N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMBA2N10A
Manufacturer	Excelliance MOS
File Size	423.55 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMBA2N10A Datasheet

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V 100mΩ RDSON (MAX.)@VGS=4.5V 150mΩ ID @TC=25℃ 17A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current L = 0.01mH Avalanche Energy L = 1.0mH Repetitive Avalanche Energy2 L = 0.