EMBA2N10AS Description
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 375°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2%.
| Part number | EMBA2N10AS |
|---|---|
| Download | EMBA2N10AS Datasheet (PDF) |
| File Size | 423.55 KB |
| Manufacturer | Excelliance MOS |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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| Part Number | Description |
|---|---|
| EMBA2N10A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA2A06HS | Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA2A10VS | Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA0A10G | MOSFET |
| EMBA0N10A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 375°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2%.