EMBA5A10G Description
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
- Part: EMBA5A10G
- Manufacturer: Excelliance MOS
- Size: 190.31 KB
Related Excelliance MOS Datasheets
| Part Number | Description |
|---|---|
| EMBA5C10A | MOSFET |
| EMBA5C10G | N & P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA5N10A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA5N10AS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA5N10CS | MOSFET |