Datasheet4U Logo Datasheet4U.com

EMBA5A10G - MOSFET

📥 Download Datasheet

Datasheet Details

Part number EMBA5A10G
Manufacturer Excelliance MOS
File Size 190.31 KB
Description MOSFET
Datasheet download datasheet EMBA5A10G Datasheet

📁 Similar Datasheet

  • EMB09P03A - P-Channel 30V MOSFET (VBsemi)
  • EMB10 - PNP Digital Transistors (Rohm)
  • EMB10FHA - PNP -100mA -50V Complex Digital Transistors (ROHM)
  • EMB11 - Dual Digital Transistors (Rohm)
  • EMB11 - Dual Digital Transistors (JCET)
  • EMB1412 - EMB1412 MOSFET Gate Driver (Rev. B) (ETCTI)
  • EMB1428Q - EMB1428Q Switch Matrix Gate Driver (Rev. A) (ETCTI)
  • EMB1432Q - EMB1432Q 60-V 14-Channel Battery Stack Module Analog Front End (Rev. D) (ETCTI)
  • EMB1433Q - EMB1433Q 60-V 14-Channel Battery Stack Protection Chip with Programmable Window Comparator Supports Multi-Module Battery Packs (Rev. B) (ETCTI)
  • EMB1499Q - EMB1499Q Bidirectional Current DC-DC Controller (Rev. B) (ETCTI)
Other Datasheets by Excelliance MOS
  • EMBA5C10A - MOSFET
  • EMBA5C10G - N & P-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMBA5N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMBA5N10AS - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMBA5N10CS - MOSFET
  • EMBA5N10G - MOSFET
  • EMBA5N10V - MOSFET
  • EMBA5P06J - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH BVDSS 100V RDSON (MAX.) 150mΩ ID 3A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMBA5A10G LIMITS ±20 3 2.1 12 2 0.8 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ TYPICAL MAXIMUM 25 62.5 UNIT °C / W 2013/10/8 p.
Published: |