| Part number | EMBA5A10G |
|---|---|
| Datasheet | EMBA5A10G-ExcellianceMOS.pdf |
| File Size | 190.31 KB |
| Manufacturer | Excelliance MOS |
| Description | MOSFET |
|
|
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
See all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMBA5C10A | MOSFET |
| EMBA5C10G | N & P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA5N10A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA5N10AS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA5N10CS | MOSFET |
| EMBA5N10G | MOSFET |
| EMBA5N10V | MOSFET |
| EMBA5P06J | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMBA5P06P | MOSFET |
| EMBA0A10G | MOSFET |
