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EMBB5B10G - MOSFET

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Part number EMBB5B10G
Manufacturer Excelliance MOS
File Size 189.19 KB
Description MOSFET
Datasheet download datasheet EMBB5B10G Datasheet

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Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐100V RDSON (MAX.) 250mΩ ID ‐2.5A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMBB5B10G LIMITS ±20 ‐2.5 ‐1.8 ‐10 2 0.8 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ TYPICAL MAXIMUM 25 62.5 UNIT °C / W 2012/9/21 p.
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